Longitudinally coupled surface emitting semiconductor laser array
US4797892A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 1987 |
| Grant date | Jan 10, 1989 |
| Priority date | — |
| Expiry date | May 11, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A longitudinally coupled, coherent, surface emitting semiconductor laser array in a monolithic wafer is disclosed. Active regions of diode laser-striped semiconductor material are focused ion beam (FIB) micromachined to form transversely disposed channels of symmetric, opposed, generally parabolic mirrored surfaces. Diode laser pairs, emitting laser energy in a generally horizontal plane, are longitudinally injection-coupled (phase-locked) by semi-transmissive, opposed regions that are micromachined into the otherwise reflective parabolic surfaces of the channel. Coherent, laser energy is reflected thereby generally normally away from the surface of the monolithic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.