Field effect transistor
US4799087A · kind A · utility
4Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1987 |
| Grant date | Jan 17, 1989 |
| Priority date | — |
| Expiry date | Jul 10, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.