Semiconductor memory device
US4799089A · kind A · utility
3Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1988 |
| Grant date | Jan 17, 1989 |
| Priority date | — |
| Expiry date | Feb 4, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device, in which many memory cells formed by transistors having a Schottky barrier transistor as a load are arranged along word lines and the memory cells are driven from one end of the word lines by word drivers. Dummy cells are formed between the word drivers and the memory cells adjacent to the word drivers, so that a forward voltage of the memory cells adjacent to the word drivers is not affected by polycrystalline silicon in the word drivers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.