Apparatus for forming a thin film
US4799454A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 1987 |
| Grant date | Jan 24, 1989 |
| Priority date | — |
| Expiry date | Dec 30, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/221
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for forming a thin film in which the reactive gases, which have been activated by the reactive gas activation means, accelerated by the kinetic energy controlling means, and still more activated by the excimer laser beam emitted toward the neighborhood of the substrate from the excimer laser beam emitting means disposed outside of the vacuum chamber, react with the material to be deposited, which has been clustered or turned into the cluster ion by the ICB device and accelerated, to form a thin film of a compound as the material to be deposited on the substrate disposed within the vacuum chamber maintained at a predetermined degree of vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.