Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4800173A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1987 |
| Grant date | Jan 24, 1989 |
| Priority date | — |
| Expiry date | Feb 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for producing a valence electron controlled functional crystalline film by introducing (i) a film forming gaseous raw material, (ii) a halogen series gaseous oxidizing agent to oxidize the raw material (i), and (iii) a gaseous raw material to impart a valence electron controlling agent separtely into a reaction region of a film deposition space and chemically reacting them to generate plural kinds of precursors containing excited precursors and to let at least one kind of said precursors to act as a film forming supplier whereby said crystalline film is formed on a selected substrate being kept at a predetermined temperature in the film deposition space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.