Phosphorous planar dopant source for low temperature applications
US4800175A · kind A · utility
4Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 29, 1987 |
| Grant date | Jan 24, 1989 |
| Priority date | — |
| Expiry date | May 29, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A boron-containing heterocyclic compound prepared by reacting a primary amine of ammonia with an alkylene oxide or epoxide and then reacting concurrently or subsequently this reaction intermediate with a boric acid. This boron-containing heterocyclic compound may further be reacted with a metal metalloid or other metal compound and even further contain sulfur, such as a sulfide group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.