Memory element for information storage and retrieval system and associated process
US4800526A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 8, 1987 |
| Grant date | Jan 24, 1989 |
| Priority date | — |
| Expiry date | May 8, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B9/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A memory element for an electron beam target comprising an electrically insulating support laminated to a conductive layer which, in turn, is laminated to a dielectric surface layer having a thickness less than 1 micrometer, e.g. 0.04-0.8 micrometer, a resistivity of at least 10.sup.16 ohm-cm and a dielectric strength of at least 10.sup.5 volts/cm; said dielectric surface layer comprising a material sensitive to electron beam irradiation and provided, essentially coplanar with its exposed surface, with focusing means or indicia in the form of shaped patterns that provide reference points for locating recording or retrieval points during electron beam exposure and scanning of the target surface. Writing is accomplished by irradiating with an electron beam either to develop a charge pattern or to alter the state of polymerization of cross-linking or both in a prescribed pattern for transmitting data. Where polymerization or cross-linking is involved, the material is altered such that subsequent contact with a solvent selectively removes the material in the state of lesser polymerization, leaving behind permanent islands of the unremoved material. By assigning a given logical meaning …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.