Method of forming a photoresist pattern
US4801518A · kind A · utility
7Cited by
12References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1987 |
| Grant date | Jan 31, 1989 |
| Priority date | — |
| Expiry date | Dec 3, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a photoresist pattern wherein a photoresist coating film of naphthoquinone diazide sulfonate of novolak is formed on a substrate layer, the photoresist coating film is exposed by selectively irradiating with near ultraviolet radiation of 350 to 450 nm through a photomask, and the exposed photoresist coating film is developed with an either a negative type or positive type developing solution. The resultant photoresist pattern is usable for manufacturing a highly integrated circuit such as LSI which requires fine processing techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.