Semiconductor processing utilizing carbon containing thick film spin-on glass
US4801560A · kind A · utility
26Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1987 |
| Grant date | Jan 31, 1989 |
| Priority date | — |
| Expiry date | Oct 2, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described is a process of utilizing carbon containing thick film spin-on glass with a directional etching process, such as RIE, or a downstream etching mechanism. As a layer of photoresist is etched from the surface of the spin-on glass, a skin layer of carbonless glass results. The skin layer protects the remaining glass from having the carbon removed allowing the use of spin-on glass on the order of 10,000 Angstroms thick.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.