Monolithic semiconductor structure of a heterojunction bipolar transistor and a laser
US4801993A · kind A · utility
Inventors
Key dates
| Filing date | Feb 4, 1987 |
| Grant date | Jan 31, 1989 |
| Priority date | — |
| Expiry date | Feb 4, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This structure comprises a heterostructure formed from first, second and third stacked semiconductor layer, the first and third layers being of N-GaAlAs having a forbidden band width at least equal to that of the materials forming the second layer constituting the active layer of the structure, said second layer being formed from a super-lattice having thin layers of P-GaAs and thin layers of P-GaAlAs in alternating form and oriented parallel to the first and third layers, a N region extending at least from one face to the other of the third layer defining with the latter the PN junction of the laser and means for supplying the laser and transistor with current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.