Semiconductor electron-current generating device having improved cathode efficiency
US4801994A · kind A · utility
19Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1987 |
| Grant date | Jan 31, 1989 |
| Priority date | — |
| Expiry date | Mar 5, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/308
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
By providing an intrinsic semiconductor region in a reverse biased junction cathode between an n-type surface region and a p-type zone, a maximum field is present over the intrinsic region in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, while in addition electrons to be emitted at a sufficient energy are generated by means of tunneling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.