Optical recording medium
US4803660A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1987 |
| Grant date | Feb 7, 1989 |
| Priority date | — |
| Expiry date | Feb 24, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/24316
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In an optical memory of phase transition type such that information is recorded or erased by reversibly changing the phase of a thin recording film between equilibrium phase and non-equilibrium phase in response to a laser beam, the memory is formed with a recording film comprising as the main component an intermetallic compound with a melting point between 300.degree. to 800.degree. C. in accordance with a binary target co-sputtering technique. Since the phase transition temperature of the recording film is higher than room temperatures, the recorded film can stably be kept in non-equilibrium phase state for a long time. Further, since the melting point thereof is lower than 800.degree. C., it is possible to record or erase information in or from the medium in response to a relatively small power laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.