Method for measuring lattice defects in semiconductor
US4803884A · kind A · utility
12Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1987 |
| Grant date | Feb 14, 1989 |
| Priority date | — |
| Expiry date | Dec 22, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2291/0289
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for measuring lattice defects in semiconductor such as a silicon crystal, detects an ultrasonic velocity of an ultrasonic pulse propagating through the semiconductor to which heat is variably applied. An elastic constant of the semiconductor is calculated from the ultrasonic velocity, and a concentration or density of lattice defects of the semiconductor is obtained by converting the elastic constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.