Method of manufacture of galluim arsenide field effect transistors

US4804635A · kind A · utility

Assignee

• ITT Gallium Arsenide Technology Center, A Division of ITT Corporation · US

Inventor

• John M. Young · Palm Harbor, US

Key dates

• Filing date: Mar 11, 1985
• Grant date: Feb 14, 1989
• Expiry date: Mar 11, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A self-aligned gate structure for a compound semiconductor MESFET is formed rom a lower silicon layer and an upper metal, e.g. nickel, region. The nickel region forms an etch mask for the silicon and subsequently an implantation mask for the drain and source regions. Etching of the silicon provides an undercut whereby the gate separation from the drain and source is defined. Heating the structure to anneal the implant diffuses the metal into the silicon to form a compound silicide gate structure.