Read-only memory
US4805143A · kind A · utility
19Cited by
3References
28Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 12, 1987 |
| Grant date | Feb 14, 1989 |
| Priority date | — |
| Expiry date | Jan 12, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/126
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A mask-programmed ROM includes depletion type load MOSFETs provided between data lines in a memory array and a power supply voltage, the MOSFETs having a ground potential of the circuit applied to their gates. Reading of data is carried out by an amplifying MOSFET which supplies a current to a selected data line through a depletion type MOSFET which is supplied at its gate with the circuit ground potential. Thus, bias voltages which are respectively applied to the data lines and a sense amplifier which receives a signal read out from a selected data line are made equal to each other, thereby achieving a high-speed read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.