Use of infrared radiation and an ellipsoidal reflection mirror
US4806321A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jul 25, 1985 |
| Grant date | Feb 21, 1989 |
| Priority date | — |
| Expiry date | Jul 25, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor crystal growth apparatus, a growth vessel enclosing a substrate is evacuated to an ultrahigh vacuum, and gas molecules containing a component element of a semiconductor which should grow on the substrate is introduced according to a predetermined time sequence into the growth vessel from an external gas source. Infrared radiation from an infrared radiation emitting lamp associated with the growth vessel and controlled by a temperature control unit is directed toward and onto the substrate whose temperature is to be maintained at a predetermined setting. Crystal growth of one molecular layer after another can be achieved by the apparatus with dimensional accuracy of the thickness of a single molecular layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.