Method for manufacturing photoelectric conversion devices
US4806496A · kind A · utility
62Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1987 |
| Grant date | Feb 21, 1989 |
| Priority date | — |
| Expiry date | Jan 28, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.