Method for doping semi-conductor material during epitaxial growth

US4806502A · kind A · utility

Assignee

• Licentia Patent-Verwaltungs-GmbH · DE

Inventors

• Helmut Jorke · Gerstetten, DE
• Horst Kibbel · Erbach, DE

Key dates

• Filing date: Dec 9, 1987
• Grant date: Feb 21, 1989
• Expiry date: Dec 9, 2007

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/169
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a doped semiconductor layer on a semiconductor substrate, employing particle radiation, including the steps of initially applying an adsorbed layer containing a doping substance to the semiconductor substrate; controlling the concentration of the doping substance in the adsorbed layer; growing a semiconductor layer having a crystal lattice structure on the substrate; performing a secondary implantation operation for incorporating the doping substance in the crystal lattice of the semiconductor layer; and performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions.