Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device

US4806998A · kind A · utility

Assignee

• Thomson-CSF · FR

Inventors

• Borge Vinter · Paris, FR
• Armand Tardella · Ifs, FR

Key dates

• Filing date: Jun 25, 1987
• Grant date: Feb 21, 1989
• Expiry date: Jun 25, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4755

Abstract

A heterojunction semiconductor device which has a dual channel with a high mobility layer, a barrier layer and a low mobility layer. The barrier layer is thin enough for the carriers to pass from the low mobility layer to the high mobility layer by tunnel effect, during variations of the polarization electrical field of the dual channel. The device can be used as field effect transistors with a quick response time, without variation in the charge of the channel but with a variation in the mobility of the carriers; or as negative transconductance devices for oscillators or complementary transistors in integrated circuits.