Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide
US4807015A · kind A · utility
6Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1987 |
| Grant date | Feb 21, 1989 |
| Priority date | — |
| Expiry date | May 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device which is provided with an electrode and/or an interconnection made of a refractory metal film containing silicon oxide is disclosed. A refractory metal film containing silicon oxide has high capability of blocking penetration of ions and is suitable for being employed as a mask for forming a source and a drain of an MOS transistor by ion-implantation and as it has strong adhesion with an insulation film improves reliability of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.