Semiconductor vapor phase growth apparatus
US4807561A · kind A · utility
5Cited by
2References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 12, 1987 |
| Grant date | Feb 28, 1989 |
| Priority date | — |
| Expiry date | May 12, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor phase growth substrate is conveyed into a heated atomosphere, and vapor phase growth gas is supplied from a nozzle connected to a gas supply means to the substrate in the middle portion of conveyance. Process program information relating to the conveying speed of the substrate, the heating temperature, the gas flow rate and the types of the gases being used is stored, in advance, in a memory of a controller, the information is read from the memory, to adoptively control the conveying speed of the substrate, the heating temperature, and the gas supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.