Patent · US Expired

Process for the stabilization of PN junctions

US4808542A · kind A · utility

7Cited by

9References

17Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Hansjoerg Reichert · Munich, DE
Ludwig Scharf · Munich, DE
Margarete Deckers · Hersbruck, DE

Key dates

Filing date	Aug 10, 1987
Grant date	Feb 28, 1989
Priority date	—
Expiry date	Aug 10, 2007

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02337
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following the wet chemical etching of the oxide layer (12), the overlapping nitride (13) is re-etched. Dopant implantation takes place in the wet-chemically-etched region. This then is followed by a diffusion. A process of this type achieves high electrical stability for an electronic component. Thereupon, the photoresist (14) or any other type of layer covering the nitride (13) is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.