Photoelectric conversion device
US4811069A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1988 |
| Grant date | Mar 7, 1989 |
| Priority date | — |
| Expiry date | Feb 22, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/227
Abstract
A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni, a transparent electrode formed of ITO or the like, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode. A bias voltage is applied across the metallic electrode and the transparent electrode so that the metallic electrode is biased to a negative potential relative to the transparent electrode. A Schottky barrier formed in the interface between the metallic electrode and the i-type hydrogenated amorphous silicon layer is used as an electron blocking layer. Thus, the dark current is suppressed on a low level and the photoelectric conversion device is able to operate at a high S/N ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.