Compound semiconductor surface termination
US4811077A · kind A · utility
41Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1987 |
| Grant date | Mar 7, 1989 |
| Priority date | — |
| Expiry date | Jun 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.