Photo CVD apparatus, with deposition prevention in light source chamber
US4811684A · kind A · utility
43Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 3, 1987 |
| Grant date | Mar 14, 1989 |
| Priority date | — |
| Expiry date | Sep 3, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A photo CVD apparatus for use with a reactive gas is disclosed, which includes a reaction chamber, a second chamber for a light source, separated from the reaction chamber by a transparent window. There is also a conduit connecting these two chambers and a means for preventing deposition by the reactive gas on the light source chamber walls, such as heating, is provided. Examples of this technique's applicabilities are given with such gases as Si.sub.2 H.sub.6 or Al(CH.sub.3).sub.3 and ammonia.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.