Method for forming a deposited film
US4812325A · kind A · utility
32Cited by
24References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1986 |
| Grant date | Mar 14, 1989 |
| Priority date | — |
| Expiry date | Oct 21, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08278
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.