Strain gage having a thin discontinuous metal layer
US4812800A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1987 |
| Grant date | Mar 14, 1989 |
| Priority date | — |
| Expiry date | Feb 5, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C10/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A highly sensitive strain gage containing a thin discontinuous metal layer whose conduction effect is based predominantly on the tunnel effect and which is applied uniformly onto a thin, nonmetallic, dielectric or semiconducting substrate such as uniaxially oriented or partially crystalline plastic film, an ordered ultrathin layer or a silicone-coated plastic film, the diffusion processes in the applied metal layer being reduced and its structural stability improved as a result of interaction of the substrate with the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.