Thin-film transistor matrix for liquid crystal display
US4816885A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1987 |
| Grant date | Mar 28, 1989 |
| Priority date | — |
| Expiry date | May 8, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin-film transistor matrix comprises thin-film transistors formed on a dielectric substrate and arranged in rows and columns. Each of the transistors comprises a control electrode, an insulation film formed on the control electrode, a semiconductor film formed on the insulation film, a first main electrode formed on the semiconductor film, and a second main electrode formed on the semiconductor film. Row interconnection layers are provided for the respective rows to interconnect the control electrodes of the transistors of the respective rows. Column interconnection layers are provided for the respective columns to interconnect the first main electrodes in the respective columns. The insulation film and the semiconductor film are formed in the regions where the transistor is formed and in the regions where the column interconnection layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.