Process for forming deposited film
US4818563A · kind A · utility
31Cited by
42References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1986 |
| Grant date | Apr 4, 1989 |
| Priority date | — |
| Expiry date | Feb 20, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.