Method for forming deposited film
US4818564A · kind A · utility
8Cited by
21References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1986 |
| Grant date | Apr 4, 1989 |
| Priority date | — |
| Expiry date | Oct 22, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.