Semiconductor light-emitting element
US4819057A · kind A · utility
20Cited by
1References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1986 |
| Grant date | Apr 4, 1989 |
| Priority date | — |
| Expiry date | Sep 25, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6572
Abstract
A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer, and an organic Langmuir-Blodgett thin film formed on the semiconductor layer. The thin film includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer of metallic material is formed on the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.