Polycrystalline silicon wafer tray
US4820145A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1986 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Nov 3, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/605
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.