Titanium nitride sputter targets
US4820393A · kind A · utility
30Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | May 11, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.