Introducing lattice defect with ice particles in semiconductor wafer
US4820650A · kind A · utility
13Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Nov 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention employs ice for introducing lattice defect into a semiconductor wafer, and is constructed to introduce particles of ice into the semiconductor wafer by ionizing (24) and accelerating (25) the particles of ice, whereby backside damage can be provided on the semiconductor wafer without leaving a pollutant source of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.