Dynamic infrared simulation cell
US4820929A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Apr 10, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/254
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A dynamic infrared simulation cell comprising a photoconductive layer, a first conductive layer, a second conductive layer, and an external energy source. The first conductive layer is affixed about one side of the photoconductive layer and is transmissive with respect to radiation of known energy. The second conductive layer is affixed about the other side of the photoconductive layer. The external energy source connects to the first conductive layer and the second conductive layer. The photoconductive layer is a plurality of segments of photoconductive silicon material. A dielectric material fills the areas between the segments of photoconductive material. The first conductive layer is a transparent layer of gold material. The second conductive layer is a layer of aluminum material. An enclosure is available for maintaining the cell in a darkened environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.