Insulated gate type field effect transistor
US4821084A · kind A · utility
19Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Jan 21, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Extension directions of source electrode layer and a drain electrode are parallel to rows or columns of an array of alternately arranged source regions and drain regions, thereby forming widths of source and drain electrode layers wider than those of a conventional transistor to obtain a large mutual conductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.