Semiconductor nonvolatile memory
US4821236A · kind A · utility
61Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Feb 9, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Feb 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called "punch-through" injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.