Forms of transition metal dichalcogenides
US4822590A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1986 |
| Grant date | Apr 18, 1989 |
| Priority date | — |
| Expiry date | Apr 23, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S106/02
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Novel single layer materials of the form MX.sub.2, where MX.sub.2 is a layer-type dichalcogenide such as MoS.sub.2, TaS.sub.2, WS.sub.2, or the like, exfoliated by intercalation of an alkali metal, and immersion in water, are disclosed. MoS.sub.2 has been exfoliated into monolayers by intercalation with lithium followed by reaction with water. X-ray diffraction analysis demonstrates that the exfoliated MoS.sub.2 in suspension is in the form of one-molecule-thick sheets. X-ray patterns from dried and re-stacked films of exfoliated MoS.sub.2 indicate that the layers are randomly stacked. By adsorbing monolayers or precipitating clusters of various species such as compounds of Co, Ni, Pb, Cd, Al, Ce, In and Zn, on MoS.sub.2 while the sulfide is suspended as single layers and then recrystallizing, a new group of inclusion compounds can be formed. In the re-crystallized or re-stacked materials, the inter-layer spacing can be expanded or contracted compared to MoS.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.