Method for forming deposited film
US4822636A · kind A · utility
9Cited by
43References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1986 |
| Grant date | Apr 18, 1989 |
| Priority date | — |
| Expiry date | Dec 16, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.