Programmable low impedance anti-fuse element
US4823181A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 1986 |
| Grant date | Apr 18, 1989 |
| Priority date | — |
| Expiry date | May 9, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.