Method for forming a multi-layer deposited film
US4824697A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1987 |
| Grant date | Apr 25, 1989 |
| Priority date | — |
| Expiry date | Jan 12, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.