Double heterojunction inversion base transistor

US4825269A · kind A · utility

Assignee

• Stanford University · US

Inventors

• James D. Plummer · Portola Valley, US
• Robert C. Taft · Munich, DE

Key dates

• Filing date: Mar 4, 1988
• Grant date: Apr 25, 1989
• Expiry date: Mar 4, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A bipolar transistor in which the base region includes a heterostructure and a doped layer of semiconductor material with the heterostructure functioning as a two-dimensional hole gas. The doped layer is sufficiently thin to prevent occurrence of a charge-neutral region of holes. In operation the transistor can switch quickly since minority charge storage in the base region does not present a problem. The device lends itself to downscaling in size in a VLSI circuit.