Integrated capacitor and method of fabricating same
US4826779A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1986 |
| Grant date | May 2, 1989 |
| Priority date | — |
| Expiry date | Oct 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated capacitor having an oxide layer of less than 500 .ANG. as a dielectric or insulator. A method of fabricating a capacitor including the steps of forming an oxide layer on a substrate, forming through the oxide layer a first capacitor plate in the substrate, and forming a second capacitor plate on the oxide layer. The method also includes the step of restructuring the oxide layer after the step of forming the first capacitor plate. Since the first capacitor plate is formed through the oxide layer the oxide layer can be grown on an undoped or lightly doped substrate; thus, the effects of the doping level on the growth rate of the oxide layer are eliminated and oxide layers having a uniform thickness of less than 500 .ANG. can consistently be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.