Method for fabricating a BiCMOS device
US4826783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1987 |
| Grant date | May 2, 1989 |
| Priority date | — |
| Expiry date | Oct 8, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
Abstract
This invention provides a method for fabricating a BiCMOS device, in which said device has a Si substrate of a first conductivity in which there is formed a first substrate region of a second conductivity for a bipolar transistor, a second substrate region of said second conductivity for a first MOSFET, having a source and drain of the first conductivity, and in which a part of said Si substrate is formed to provide a second MOSFET which has a source and drain of the second conductivity. A first nitride layer is used to prevent the substrate under a masking layer from oxidizing during the following oxidation processes, wherein the masking layer is composed of a oxide layer and the nitride layer. After some processes, the masking layer is removed. Implanting As impurities, a new oxide layer and a new nitride layer are deposited, wherein the role of the nitride layer is to protect a shallow emitter region. After that, a new clean oxide layer is grown for a gate insulator layer, and controllable clean gate oxide layer is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.