Amorphous silicon photo sensor with blocking diode
US4827117A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1988 |
| Grant date | May 2, 1989 |
| Priority date | — |
| Expiry date | Apr 13, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
An image sensor array comprises an insulating substrate, a plurality of individual electrodes formed on the substrate, a plurality of blocking diodes formed on the respective individual electrodes, a plurality of photo diodes formed on the blocking diodes to form a plurality of series conections of a blocking diode and a photo diode, a plural number of common electrodes of a transparent conductor material, each of the common electrodes covering one of the photo diodes on the same individual electrodes, and a filter covering portions of the common electrodes above the photo diodes. A photo-shielding layer of metal, amorphous silicon, amorphous germanium or amorphous silicon germanium may be interposed between the blocking diode and the photo diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.