Field emission vacuum devices
US4827177A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1987 |
| Grant date | May 2, 1989 |
| Priority date | — |
| Expiry date | Sep 3, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. The first electrode structure has a pointed end and/or a sharp edge and/or is formed of low work function material so that, when a suitable voltage is applied between the first and third electrode structures, electrons are emitted from the first electrode structure due to a field emission process. Electrons therefore flow from the first to the third electrode structure substantially parallel to the substrate. The second electrode structure acts as a control electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.