Semiconductor device with strained InGaAs layer

US4827320A · kind A · utility

Assignee

• The Board of Trustees of the University of Illinois · US

Inventors

• Hadis Morkoc · Urbana, US
• John F. Klem · Albuquerque, US
• William Masselink · Urbana, US
• Timothy S. Henderson · Richardson, US
• Andrew Arthur Ketterson · Dallas, US

Key dates

• Filing date: Sep 19, 1986
• Grant date: May 2, 1989
• Expiry date: Sep 19, 2006

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4732

Abstract

A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.