Method and apparatus for the reactive vapor depositing of metal compounds
US4828872A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1986 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Sep 11, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus is disclosed for the reactive deposition of vapors of metal compounds onto substrates by the evaporation of at least one metal by means of an electron beam in an atmosphere consisting of the reaction gas, at pressures of no more than 10.sup.-1 mbar. An electrode positively biased with respect to ground and having an acceleration voltage of at least 20 kV is disposed in the area of the vapor stream flowing to the substrate. The metal vapor is produced in an internal chamber which surrounds the evaporator and has a masked orifice opposite the substrate. The reaction gas is introduced into the internal chamber and the metal vapor and reaction gas are guided by the masked orifice toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.