Substrate solder barriers for semiconductor epilayer growth
US4829020A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1987 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Oct 23, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12576
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.