Radiation detecting apparatus
US4829173A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1987 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Mar 2, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor photodetector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. An ohmic contact is made to several of the rods at one end, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body containing the opposite ends of the rods. A detector is connected between the two ohmic contacts and detects current flow generated in response to incident radiation impinging on the body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.